Title:
MANUFACTURE OF INFRARED EMISSION DETECTING DEVICE
Document Type and Number:
Japanese Patent JPS63107074
Kind Code:
A
Abstract:
In the manufacture of an infra-red radiation detector element (51) a body of infra-red sensitive material (e.g. cadmium mercury telluride) secured to a substrate (22) is subjected to ion-etching to remove part of the material over the whole thickness of the element (51) at areas (56) between the contact areas of the element electrodes (35 and 36b) so as to define a current path between these electrodes (35 and 36b) which extends through the remaining material and is longer than the distance along a straight line between the electrodes (35 and 36b). This longer current path increases the charge-carrier transit time and resistance between the electrodes (35 and 36b) so that the responsivity of the detector element (51) can be improved while still producing a compact element structure because of the advantages of defining the current path by ion-etching. This etch-removal may involve forming parallel slots (56) which extend from opposite side walls of the element (51) to define a meandering current path, and may additionally be used to form a mutual separation (55) between portions (51 and 52) of the body each of which is to form a separate infra-red detector element of an array formed on the substrate (22).
It is suggested that Figure 16 should accompany the abstract when published.
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Inventors:
MOORISU BIKUTAA BURATSUKUMAN
MAIKERU DEIBITSUDO JIENAA
MAIKERU DEIBITSUDO JIENAA
Application Number:
JP21927187A
Publication Date:
May 12, 1988
Filing Date:
September 03, 1987
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01L27/14; G01J1/02; H01L21/302; H01L21/3065; H01L21/465; H01L21/467; H01L27/144; H01L31/0224; H01L31/0264; H01L31/0296; H01L31/0352; H01L31/036; H01L31/09; H01L31/18; (IPC1-7): G01J1/02; H01L27/14; H01L31/08
Domestic Patent References:
| JP48111087A |
Foreign References:
| US4073969A | 1978-02-14 |
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)