PURPOSE: To simplify the manufacturing steps by arranging infrared detectors on a high specific resistance substrate in a matrix shape, commonly connecting one electrodes of the elements in row direction with conductive films and connecting the other electrodesin column direction.

CONSTITUTION: A compound semiconductor layer 2 formed of HgCaTe is epitaxially grown on a CaTe substrate 1 of high specific resistance. The electrodes 3a, 3b of an In film are formed thereon. This substrate is selectively etched to be isolated to form infrared detectors 4 arranged in rows. An insulating layer is covered on the overall substrate, contacting holes are opened on the electrode 3a, and the electrodes 3a of the respective detectors are commonly connected via contacting holes in row direction, and conductive film 5 is patterned. Similarly, the electrodes 3a are commonly connected in column direction, the conductive film 6 is patterned. Thus, the manufacturing steps can be simplified.