Title:
MANUFACTURE FOR JUNCTION TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPS5366381
Kind Code:
A
Abstract:
PURPOSE: To obtain a good high frequency performance, by separately forming the source diffusion domain and the gate diffusion domain, reducing the opposed area of both, increasing the source to gate open voltage, and decreasing the capacitance.
Inventors:
AIGA MASAO
Application Number:
JP13082576A
Publication Date:
June 13, 1978
Filing Date:
October 29, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/80; H01L21/31; H01L29/06; (IPC1-7): H01L21/31; H01L29/06; H01L29/80