MANUFACTURE OF LIGHT EMITTING DIODE ARRAY CHIP

Title:

MANUFACTURE OF LIGHT EMITTING DIODE ARRAY CHIP

Document Type and Number:

Japanese Patent JPH01184880

Kind Code:

A

Abstract:

PURPOSE:To prevent light oozing, by arranging a protective film having property to cut off infrared rays. CONSTITUTION:On a GaAs wafer, GaAsP is epitaxially grown to form a wafer 12, and thereon an Al film is formed. After a diffusion window 14 is made in the Al film, anodized aluminum treatment is performed to form an Al2O3 protective film 16. Through the window 14 Zn is diffused, a diffusion layer 16 is arranged, a P-N junction is formed, and a light emitting element 17 is obtained. An individual Al electrode 18, a surface protective SiO2 film 11, and a common electrode 20 are formed, and a light emitting diode array chip is obtained. Since the Al2O3 protective film 15 has property to cut off infrared rays, light does not ooze out toward the outer periphery of the light emitting element 17, in the case where the wavelength of emitting light of the light emitting element 17 is made long to improve the luminous efficiency.

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Inventors:

SHIOSE NOBUYUKI

Application Number:

JP540988A

Publication Date:

July 24, 1989

Filing Date:

January 13, 1988

Export Citation:

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Assignee:

SUNX LTD

International Classes:

B41J2/44; B41J2/45; B41J2/455; H01L33/30; H01L33/40; (IPC1-7): B41J3/21; H01L33/00

Attorney, Agent or Firm:

Tsuyoshi Sato

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