Title:
MANUFACTURE OF LIGHT EMITTING DIODE
Document Type and Number:
Japanese Patent JP3163217
Kind Code:
B2
Abstract:
PURPOSE: To provide a high-luminance GaP yellow green light emitting diode by preventing the deterioration of the injection efficiency and the occurrence of doner defects and omitting a melt back process which affects the stability of a P-N junction section.
CONSTITUTION: A light emitting diode manufacturing method includes a process for forming an n-type GaP layer 1 by epitaxial growth by bringing an oversaturated Ga melt into contact with an n-type GaP substrate 20, process for forming an n-type GaP:N layer 2 containing an n-type carrier at a lower concentration by epitaxial growth by bringing an NH3 gas into contact with a Ga melt and process for forming a p-type GaP:N layer 3 containing the n-type carrier at a concentration which is equivalent to that in the low-concentration carrier area in the layer 2 by epitaxial growth. The layer 2 is formed by using a p-type carrier composed of the C (carbon) of a boat for liquid phase epitaxial growth. In addition, Si is used as an n-type dopant.
Inventors:
Hiroshi Umeda
Hiroshi Tanaka
Masamichi Harada
Yasuhiko Arai
Hiroshi Tanaka
Masamichi Harada
Yasuhiko Arai
Application Number:
JP11799994A
Publication Date:
May 08, 2001
Filing Date:
May 31, 1994
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L33/30; (IPC1-7): H01L33/00
Domestic Patent References:
| JP60236221A | ||||
| JP3209883A | ||||
| JP55108785A | ||||
| JP55120184A |
Attorney, Agent or Firm:
Takaya Koike