Title:
MANUFACTURE OF MEMBRANE, MEMBRANE AND BLANK USING THEREFOR
Document Type and Number:
Japanese Patent JP3235256
Kind Code:
B2
Abstract:
PURPOSE: To use a thin film formed of a more suitable material for a membrane by stopping back etching by a stop layer and then removing the layer in a method for manufacturing the membrane to be formed by back etching a base material.
CONSTITUTION: A window for back etching is opened at a silicon carbide film. A silicon base material 1 is back etched at a liquid temperature of 100° by using aqueous sodium hydroxide solution of 30% concentration, and silicon is selectively removed. A stop layer 2 is operated as a function of stopping at an end point of the back etching to stop reaction of a silicon material with etchant in a self-alignment manner to present a chromium layer, and hence can be easily controlled and decided. After a back etching solution is removed, a metal chromium layer of the layer 2 is removed by etching with etchant for the metal chromium containing ammonium cerium nitride as a main ingredient, thereby forming a desirable membrane.
Inventors:
Kosuke Ueyama
Tadashi Matsuo
Kinji Ohkubo
Fuminobu Noguchi
Shoji Tanaka
Nobuhiko Fukuhara
Tadashi Matsuo
Kinji Ohkubo
Fuminobu Noguchi
Shoji Tanaka
Nobuhiko Fukuhara
Application Number:
JP6536093A
Publication Date:
December 04, 2001
Filing Date:
March 24, 1993
Export Citation:
Assignee:
Toppan Printing Co., Ltd.
International Classes:
G03F1/22; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): H01L21/027; G03F1/16; H01L21/3065
Domestic Patent References:
| JP5898732A |