To manufacture a micro-electromechanical device such as a cantilever supporting beam.

An insulating glass substrate is used as a carrier substrate. Single crystal silicon is used as an MEM component material. An option layer of an insulating material such as silicon dioxide is laid up on the upper surface of a doped silicon layer 108 to be produced on a silicon substrate. The silicon dioxide is epoxy-bonded to the glass substrate 102 to form a silicon-silicon dioxide-epoxy-glass structure. The use of anisotropic plasma dry etching technique applies patterning to the silicon. Second patterning is followed for patterning a silicon dioxide layer 110, and oxygen plasma etching is employed to under cut an epoxy resin film for releasing the silicon MEM component. By holding the silicon dioxide insulating material on a selected area, the MEM component is mechanically supported.