Title:
MANUFACTURE OF OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH06268195
Kind Code:
A
Abstract:
PURPOSE: To provide a new manufacturing method for an optical semiconductor integrated circuit with a simple step without a degradation in element- characteristics caused by histrical thermal treatment at high temperature.
CONSTITUTION: In a manufacturing step, hydrogen 5 is implanted into a given region 2 selectively without causing a random state in crystal in a semiconductor wafer 1 so that a wavelength of photoluminescence from an optical semiconductor element in the hydrogen implanted region is shifted to a wavelength shorter than that of the optical integrated element formed in the other region.
Inventors:
MORITO TAKESHI
Application Number:
JP4972693A
Publication Date:
September 22, 1994
Filing Date:
March 11, 1993
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L27/15; H01S5/00; H01S5/026; (IPC1-7): H01L27/15; H01S3/18
Attorney, Agent or Firm:
Teiichi