Title:
MANUFACTURE OF PHOTOELECTRIC CONVERSION SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59193075
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of leakage in the junction part due to the remaining of the metal which constitutes an electrode by removing also a non single crystal semiconductor layer provided under the electrode, when the electrode on a non single crystal semiconductor is split by providing an open groove in every element. CONSTITUTION:A photo transmitting conductive film is formed over the entire upper surface of a photo transmitting insulation substrate 1 and irradiated with a laser light, thus forming the first open groove 13, and then first electrode 2 is formed in each region 31 and 11 between elements. Next, the non single crystal semiconductor layer 3 is formed thereon. Then, the second open groove 18 is formed by the irradiation with a laser light, thus exposing the side surfaces 8, 9 of the electrode 2. The second electrode 4 and a connector 30 are formed thereon. The third open groove 20 is formed in the region 31 with a laser light. In this case, not only the electrode 4 is removed, but the layer 3 thereunder is removed, resulting in the exposure of a part of the electrode 2, thereby preventing the generation of leakage in the junction part due to the remaining of a part of the electrode 4. Thus, the titled device wherein a plurality of the elements 31 and 11 are directly connected at the joint can be obtained.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP6796983A
Publication Date:
November 01, 1984
Filing Date:
April 18, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L27/142; H01L31/0224; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5712568A | 1982-01-22 | |||
| JPS5753986A | 1982-03-31 | |||
| JPS57176778A | 1982-10-30 |