PURPOSE: To contrive the improvement of sensitivity characteristic and frequency response speed, by using CdTe with Cd in excess of a stoiichiometry as an evaporation source when forming a SdTe film of a photo diode.
CONSTITUTION: After depositing a clear electrode 2 on a glass substrate 1, CdS films 3, 4 are formed by using a CdS evaporation source, and thereafter a CdTe film 5 is formed by using the CdTe with Cd in excess. Next, Te films 6, 7 are formed by using a Te evaporation source, and finally In-Sn alloy films 8, 9 are evaporated by using an In-Sn evaporation source. As a result, a photo diode is formed between films 3 and 8, and a photo diode is formed between films 4 and 7. In a photoelectric transducer manufactured in this manner, by using the CdTe evaporation source with Cd in excess as the CdTe evaporation source, the short- circuit current becomes large, and accordingly the sensitivity characteristic and frequency response speed can be improved.
DOBASHI NOBUHIRO
NAKAYAMA NOBUO
