Title:
MANUFACTURE OF POLYCRYSTALLINE SILICON FILM
Document Type and Number:
Japanese Patent JPS59159525
Kind Code:
A
Abstract:
PURPOSE:To increase the performance and reliability of a polycrystalline silicon film by forming the film on a substrate in the state that a cathode dark region in the vicinity of the surface of the film of the substrate for forming the film. CONSTITUTION:A corning glass is mounted on a substrate heating holder 402, a bell-jar 401 is evacuated by a diffusion pump 409 to background pressure or lower, the substrate temperature is raised, and the prescribed temperature is held. Subsequently the pressure in the bell-jar 401 is set to the prescribed pressure. After the pressure is stabilized, an electrode 413 is connected to a high frequency power source 414, a high frequency voltage is applied to the electrode 413 to start a glow discharge. Then, an opposite electrode 402 and a DC power source 419 are connected, a dark unit is formed in the vicinity of the surface of the substrate, and a film of the prescribed thickness is formed on the substrate 400.
Inventors:
HIRAI YUTAKA
OSADA YOSHIYUKI
NAKAGIRI TAKASHI
TAKAMATSU OSAMU
OSADA YOSHIYUKI
NAKAGIRI TAKASHI
TAKAMATSU OSAMU
Application Number:
JP3429283A
Publication Date:
September 10, 1984
Filing Date:
March 02, 1983
Export Citation:
Assignee:
CANON KK
International Classes:
H01L31/04; H01L21/205; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Marushima Giichi