Title:
MANUFACTURE OF PRODUCTS COMPRISING SEMICONDUCTOR DEVICES
Document Type and Number:
Japanese Patent JPH04233219
Kind Code:
A
Abstract:
PURPOSE: To provide a method which enables formation of a single crystal epitaxial semiconductor layer thicker than the limit thickness of an epitaxial growth method at a low temperature, and production of a sharp doping profile. CONSTITUTION: The temperature Ts of a single crystal semiconductor body is maintained less than 400 deg.C, and a type of semiconductor layer having a thickness not greater than a hepi corresponding to the temperature Ts is formed. After that, annealing is carried out at suitably selected temperature Ta , time ta , and heating and cooling speeds, and subsequently, another type of semiconductor layer having a thickness not greater than the hepi is formed. The important point of the present invention is that an epitaxial single-crystal Si layer, doped at a high concentration (for example, 10<19> cm<-3> ) can be manufactured. Deposition may be carried out in such a manner that almost all (at least 90%) the dopant atoms are electrically active at 20 deg.C.
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Inventors:
DEBITSUDO JIEEMUSU IIGURUSHIYA
HANSUUJIYOOKIMU ERU GOSUMAN
HANSUUJIYOOKIMU ERU GOSUMAN
Application Number:
JP16612191A
Publication Date:
August 21, 1992
Filing Date:
June 12, 1991
Export Citation:
Assignee:
AMERICAN TELEPHONE & TELEGRAPH
International Classes:
H01L21/203; H01L31/18; (IPC1-7): H01L21/203
Domestic Patent References:
| JPH0249419A | 1990-02-19 |
Attorney, Agent or Firm:
Hirofumi Mimata