MANUFACTURE FOR SEMICONDUCTOR DEVICE HAVING DOUBLE BASE CONSTRUCTION

Title:

MANUFACTURE FOR SEMICONDUCTOR DEVICE HAVING DOUBLE BASE CONSTRUCTION

Document Type and Number:

Japanese Patent JPS5334479

Kind Code:

A

Abstract:

PURPOSE: To obtain the high speed IC with less number of masks, by diffusing the impurity deeper to the domain of external base with high concentration and shallower to the internal base domain with low concentration, and by forming the diffusion separating domain with one process simultaneously.

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Inventors:

SHINADA KAZUYOSHI
SHINOZAKI SATOSHI
KANAZAWA MAMORU

Application Number:

JP10931376A

Publication Date:

March 31, 1978

Filing Date:

September 11, 1976

Export Citation:

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Assignee:

TOKYO SHIBAURA ELECTRIC CO

International Classes:

H01L29/73; H01L21/225; H01L21/331; H01L29/72; (IPC1-7): H01L21/225; H01L29/72

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