PURPOSE: To control, with high reproducibility, the quality of an oxide film which is formed on a semiconductor substrate.
CONSTITUTION: In a method for manufacturing a semiconductor device in a clean room, the relative humidity in the clean room is kept lower than or equal to 50%. In a method which manages a process for manufacturing the semiconductor device in the clean room, a semiconductor substrate having MOS structure is formed in the clean room, the change of capacitance characteristics of the semiconductor substrate is measured, and the relative humidity in the clean room is regulated on the basis of the measurement results. The capacitance characteristics are capacitance-voltage characteristics (C-V characteristics) and/or time response characteristics (C-t characteristics) of a capacitor.
JPH0257844A | 1990-02-27 | |||
JPH03183132A | 1991-08-09 | |||
JPH04254328A | 1992-09-09 | |||
JPH05109766A | 1993-04-30 | |||
JPS62174923A | 1987-07-31 | |||
JPH04355921A | 1992-12-09 | |||
JPH03129735A | 1991-06-03 |