Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2774019
Kind Code:
B2
Abstract:
PURPOSE: To provide a manufacturing method of a semiconductor device which eliminates the generation of crystal defect in a source and a drain and enhances manufacturing yield with a minimum of electric leakage.
CONSTITUTION: A silicon substrate 1 in regions which form a source and a drain is exposed and a polysilicon layer 4 is laminated on the whole surface of the substrate. Impurities are implanted from there into the regions which form the polysilicon layer and the source and drain regions. This board is heated in a nitrogen gas ambient atmosphere and an SIN layer 6 in the upper part of the polysilicon layer thus formed is removed, and the polysilicon layer etched into a specific pattern. Then, an interlaminar insulation film 7 is laminated on the whole surface where a contact hole is bored thereon. A wiring material is buried into the contact hole so as to form a wiring layer thereon, thereby manufacturing a semiconductor device.
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Inventors:
Ayukawa Akitsu
Application Number:
JP14768292A
Publication Date:
July 09, 1998
Filing Date:
June 08, 1992
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/768; H01L21/265; H01L21/28; H01L21/322; H01L21/336; H01L23/522; H01L29/78; (IPC1-7): H01L29/78; H01L21/265; H01L21/28; H01L21/322; H01L21/336; H01L21/768
Domestic Patent References:
| JP63299274A |
Attorney, Agent or Firm:
Shintaro Nogawa