Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3241329
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor device by which the number of steps and the number of required masks can be reduced.
SOLUTION: In an interlayer film forming process (Fig. (D)), a control gate electrode 30 and a metallic wiring layer 32 are simultaneously formed by using one mask by executing a step of forming an oxide film 24 after a floating gate electrode 6 is exposed by removing an interlayer film 20 around the electrode 6, a step of forming a second N-type diffusion layer area 26, and a step of removing the oxide film 24 on first and second N-type diffusion areas 18 and 26 (Fig. (E) and (F)) after the interlayer film 20 is formed on a semiconductor substrate. Therefore, the number of reguired masks can be reduced by one and, at the same time, the reguired number of steps can also be reduced by one form the conventional example.
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Inventors:
Tadahiro Miwatari
Tomoaki Ohtsuki
Tomoaki Ohtsuki
Application Number:
JP28410398A
Publication Date:
December 25, 2001
Filing Date:
October 06, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP6236973A | ||||
| JP10107229A | ||||
| JP1074903A | ||||
| JP8213489A | ||||
| JP8195359A |
Attorney, Agent or Firm:
Shigeru Noda