Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3544087
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To avoid deteriorating semiconductor device characteristics due to the interface level generated at forming of electrodes by heating a semiconductor substrate in a lower temp. heating stage B than a semiconductor substrate heating stage A after this stage A, so as to form a metal film.
SOLUTION: After the plasma etching of a wafer using a fluorine-type gas for patterning a polycrystalline Si or Si nitride film, the wafer is heated at 280-300°C for 10-20min in a high temp. heat-treating stage A to release F ions from the water surface layer and then heated at 130-170°C (a stage B) to successively deposit Al (3μm), Ni (0.3μm) and Au (0.1μm) by the electron beam deposition to form an Al-Ni-Au film. This makes compatible stable semiconductor device characteristics with good solder wettability.
Inventors:
Masanori Mitamura
Application Number:
JP259097A
Publication Date:
July 21, 2004
Filing Date:
January 10, 1997
Export Citation:
Assignee:
Fuji Electric Device Technology Co., Ltd.
International Classes:
H01L21/28; H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; (IPC1-7): H01L21/28; H01L21/3065; H01L21/3205
Domestic Patent References:
| JP8064593A | ||||
| JP8172059A | ||||
| JP7099193A |
Attorney, Agent or Firm:
Masaharu Shinobe