Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01183135
Kind Code:
A
Abstract:
PURPOSE:To flatten and produce wiring with good reproducibility in large quantities by coating an IC substrate heated to more than 150 deg.C with metal containing silicon, then by segregating silicon in the coated metal to the exposed area of silicon surface to bury the exposed area. CONSTITUTION:An insulation film layer 2 is formed onto an IC substrate 1 and a silicon area is formed in the insulation film layer. An Al-Si film layer 4 is formed by sputtering apparatus while heating the IC substrate 1 at least to 150 deg.C. Then silicon in the Al-Si film causes segregation at the silicon exposed area. The Al-Si film layer 4 is removed by wet etching and a wiring layer 6 is formed through evaporation, etc., by doping impurity to the segregated silicon 5. In this way, it becomes possible to easily flatten wiring formed on an exposed area with good reproducibility suitable for mass production without purchasing another particular and expensive apparatus.
Inventors:
KUMADA TOSHIAKI
Application Number:
JP769688A
Publication Date:
July 20, 1989
Filing Date:
January 18, 1988
Export Citation:
Assignee:
SEIKO INSTR & ELECTRONICS
International Classes:
H01L21/3205; (IPC1-7): H01L21/88
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