Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01266744
Kind Code:
A
Abstract:
PURPOSE: To simplify manufacturing process and improve yield by selectively implanting a certain type of ion into SiO2 layer.
CONSTITUTION: Insulating layers 5, 6, and 8 including silicon are formed at a specified area on a semiconductor substrate 1, silicon or boron ion is implanted selectively on the insulating layers 5, 6. and 8, and silicide conversion is performed by high melt-point metal using the solid phase reaction. Then, a silicide layer 9 is formed on the corresponding insulating layer 5 at an area where ion is implanted. Thus, a process for forming a bulk Si or Poly-Si wiring part is not needed. Therefore. the manufacturing process can be simplified and yield can be improved.
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Inventors:
TSUZUKI NORIHISA
Application Number:
JP9335388A
Publication Date:
October 24, 1989
Filing Date:
April 18, 1988
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/3205; H01L21/31; H01L21/316; H01L21/318; H01L23/52; (IPC1-7): H01L21/316; H01L21/318; H01L21/88; H01L21/95
Attorney, Agent or Firm:
Aoki Akira (3 outside)