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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH02140922
Kind Code:
A
Abstract:

PURPOSE: To reduce defective elements and improve yield by forming an opposing first electrodes in bar shape, forming film on a substrate attached to a second electrode while performing reciprocating motion in parallel and relatively in reference to the first and second electrodes, and by etching the formed film.

CONSTITUTION: One electrode 13 is formed in bar shape. The electrode 13 and the other electrode 12 where a substrate 14 opposing this bar-shaped electrode 13 is attached are relatively reciprocated. Then, a curtain-shaped plasma layer generated by the bar-shaped electrode 13 performs reciprocating motion on the substrate surface, applying energy from plasma to the entire surface of the substrate 14 uniformly. Thus, it is possible to form a film uniformly on a substrate having a large diameter and to perform etching without unevenness in etching rate, to reduce failure in elements formed on the same substrate 14, and to improve yield.


Inventors:
KITAMURA YOSHITAKA
Application Number:
JP29366688A
Publication Date:
May 30, 1990
Filing Date:
November 22, 1988
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
C23C16/50; C23F1/08; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): C23C16/50; C23F1/08; H01L21/205; H01L21/302
Attorney, Agent or Firm:
Motoki Hisagi (1 outside)



 
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