PURPOSE: To prevent generation of bite of tungsten at an opening part by growing a silicon epitaxial layer only at the opening part of an insulating film using a selective epitaxial growth technology for the silicon of vapor phase reaction.

CONSTITUTION: Prior to filling a contact hole with tungsten 7, making use of a selective epitaxial growth technology for silicon of vapor growth, an epitaxial layer 6 of silicon is grown only at the opening part of an interlayer insulating film 4. At this time, the thickness of the silicon layer to be grown at the opening part is confined to below the thickness of the interlayer insulating film 4. And after filling the contact hole with the tungsten 7, wiring is done by means of Al-Si-Cn alloy deposited films 8. Hereby, the growth of the tungsten 7 advances only in the longitudial direction of a wafer 5, and the downward reaction of the insulating film 4 is suppressed, therefore the bite does not occur.