MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH029128

Kind Code:

A

Abstract:

PURPOSE: To suppress a dislocation and to easily obtain a selective oxide film by forming an oxide film on a substrate, ion implanting Al selectively in the film, and then oxidizing it.

CONSTITUTION: A thermal oxide film 12 is formed on a silicon substrate 11, and a resist film 13 is formed thereon. Then, the film 13 is patterned by a photoetching method. With the film 13 as a mask the film 12 is ion implanted with Al. The film 13 is removed, thermally oxidized by a hydrogen burning method to form a field oxide film 12'. The oxide film thickness formed on a place where is ion implanted is removed by etching to obtain a selective oxide film 12". Thus, a dislocation is suppressed, and the film 12" is easily obtained.

Inventors:

USAMI TOSHIRO
KAMIJO HIROYUKI
YAMADA KAHORU

Application Number:

JP15990288A

Publication Date:

January 12, 1990

Filing Date:

June 28, 1988

Export Citation:

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Assignee:

TOSHIBA CORP
TOSHIBA MICRO ELECTRONICS

International Classes:

H01L21/76; H01L21/316; (IPC1-7): H01L21/316; H01L21/76; H01L21/94

Attorney, Agent or Firm:

Takehiko Suzue (2 outside)

Next Patent: SEMICONDUCTOR DEVICE