PURPOSE: To remove completely a non-conductive film, which consists of Cr2O3 or the like and is formed on the surface of a CrSiO thin film resistor, without damaging the thin film resistor and to obtain a low contact resistance by a method wherein after the surface, which is exposed in contact windows, of a metal silicide film pattern is cleaned by a boiling treatment using an aqueous solution containing hydrogen peroxide and ammonia, metallic wirings are formed.

CONSTITUTION: A first insulating film 3 is formed on a p- semiconductor Si substrate 1, a metal silicide film (a CrSiO film) 104 which is used as a resistor is formed thereon and moreover, a second insulating film 5 is formed thereon and the films 5 and 104 are patterned simultaneously into the form of a CrSiO film resistor pattern 4. Then, a third insulating film 8 is formed on the whole surface and first contact windows 11A and 11B, which penetrate the films 8 and 5 and in which the upper surface of the metal silicide film pattern 4 is exposed, are formed. Then, the surface, which is exposed in the windows 11A and 11B, of the metal silicide film pattern 4 is cleaned by a boiling treatment using an aqueous solution containing hydrogen peroxide and ammonia and metallic wirings (At wirings) 15A and 15B, which are extendedly provided from the metal silicide film pattern surface being exposed in the windows 11A and 11B to the upper part of the film 8, are formed.