Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04271176
Kind Code:
A
Abstract:
PURPOSE: To hold a breakdown voltage and to obtain an element isolating film having no crack and uniform thickness in the case to isolate elements of a mesa structure semiconductor device.
CONSTITUTION: After an upper surface of an insular Si layer 2 formed on an insulator board 1 is covered with an Si3N4 film 3, a sidewall of a polysilicon film or an amorphous Si film 4 which is relatively easily oxidized is formed at a sidewall of the layer 2, the film 4 is oxidized to form a thick sidewall SiO2 film 5.
Inventors:
HARAJIRI SHUICHI
Application Number:
JP3121091A
Publication Date:
September 28, 1992
Filing Date:
February 27, 1991
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/762; H01L21/76; H01L29/78; H01L29/786; (IPC1-7): H01L21/76; H01L29/784
Attorney, Agent or Firm:
Sadaichi Igita