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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0613543
Kind Code:
A
Abstract:

PURPOSE: To obtain a silicon oxide film having a thin thickness formed on a storage electrode when forming a capacitor insulating film and improve characteristics of the capacitor insulating film, by forming the storage electrode with a boron doped P-type polysilicon film.

CONSTITUTION: The present invention comprises the steps of forming a polysilicon film 29 serving as a storage electrode of a capacitor on a semiconductor substrate 21, forming the polysilicon film 29 as a boron doped P-type polysilicon film, and forming a capacitor insulating film 30 and further a plate electrode 31 on the storage electrode 29 made of the P-type polysilicon film. Accordingly, by forming the storage electrode of the capacitor with the boron doped P-type polysilicon film 29, a silicon oxide film having a thin thickness formed on the storage electrode 29 can be obtained and the characteristic deterioration of the capacitor insulating film 30 can be reduced.


Inventors:
TAMURA HIROYUKI
TAKAHASHI MASASHI
Application Number:
JP41189090A
Publication Date:
January 21, 1994
Filing Date:
December 20, 1990
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L27/04; H01L21/28; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; H01L29/43; (IPC1-7): H01L27/04; H01L27/108; H01L29/46
Attorney, Agent or Firm:
Toshiaki Suzuki