PURPOSE: To achieve an improved ohmic contact between an electrode and an amorphous semiconductor layer by introducing a specific gas into a deposition chamber and then forming an n+ layer by inducing glow discharge.
CONSTITUTION: A gate electrode 101, an insulation layer 104, and a semiconductor layer 105 consisting of hydrogenation or fluorine amorphous silicon are formed on a substrate 106 by successively laminating them. Glow discharge is induced on a surface 108 of the semiconductor layer 105 without exposing a surface 108 to atmosphere or oxygen and then introducing a gas containing hydrogen atom and phosphor atom or arsenic atom and a gas containing silicon atom which is dilluted by hydrogen gas into a deposition chamber, thus forming a first n+ layer 107-1 and a second n+ layer 107-2. Since an n+ layer 107 is formed in a clean state immediately after formation of a layer in the semiconductor surface 108 in this manner, an improved ohmic contact is formed at the interface between the semiconductor layer 105 and the n+ layer 107, thus obtaining improved transistor characteristics.
SUGATA MASAO
HATANAKA KATSUNORI
OKUBO YUKITOSHI
NAKAGIRI TAKASHI
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