PURPOSE: To reduce an impact to a resist pattern and to form the pattern with high accuracy and with good reliability by a method wherein, after a photoresist on a semiconductor wafer has been developed, the photoresist is rinsed by using a liquid whose surface tension is smaller than that of pure water and whose volatility is high and the photoresist is dried.

CONSTITUTION: A semiconductor wafer 11 is placed on a spinning chuck 12, e.g. a tetramethylammonium hydroxide aqueous solution is discharged from a developer supply nozzle 13, the aqueous solution is swollen to be a film shape, and a developing treatment is executed. After that, pure water as a rinsing liquid is supplied in a shower manner from a first rinsing-liquid supply nozzle 14, at the same time, the spinning chuck 12 is turned, and, after that, a silicone- based organic solvent is supplied in a shower manner from a second rinsing- liquid supply nozzle 15. Thereby, the liquid can be removed at a low-speed rotation, and an impact to a photoresist can be reduced.