Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH08181317
Kind Code:
A
Abstract:
PURPOSE: To provide a manufacturing method which has high reliability and can achieve a good characteristic regarding a thin-film transistor using a polycrystal silicon thin film which is formed by melting and crystallizing a semiconductor thin film (a hydrogenated amorphous silicon thin film).
CONSTITUTION: A treatment by a hydrogen plasma a 103 is executed, at the highest treatment temperature of a process, onto a polycrystal silicon thin film 102 which has been formed into a prescribed shape. After that, a gate insulating film 104 is deposited. In addition, an interlayer insulating film is deposited. After that, a treatment by a hydrogen plasma b 109 is executed at a substrate temperature at a temperature which is lower than 400°C.
Inventors:
YOSHIOKA TATSUO
KAWAMURA TETSUYA
TSUTSU HIROSHI
FURUTA MAMORU
KAWAMURA TETSUYA
TSUTSU HIROSHI
FURUTA MAMORU
Application Number:
JP32027694A
Publication Date:
July 12, 1996
Filing Date:
December 22, 1994
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/20; H01L21/02; H01L21/268; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L29/786; H01L21/20; H01L21/268; H01L21/336; H01L27/12
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
Previous Patent: LOW THRESHOLD VOLTAGE MOS TRANSISTOR AND MANUFACTURE THEREOF
Next Patent: SOI SUBSTRATE AND ITS MANUFACTURE
Next Patent: SOI SUBSTRATE AND ITS MANUFACTURE