Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS54150967
Kind Code:
A
Abstract:
PURPOSE:To secure an outstanding getter function due to the injection layer and thus to reduce the junction leak by providing the ion injection layers and non- injection layers alternately and with the fixed space between when the ion is injected previously to the semiconductor substrate to prevent occurrence of the crystal defect. CONSTITUTION:In case the Ar ion is injected on the back of the Si substrate in order to prevent occurrence of the crystal defect, ion injection layer 11 and non- injection layer 12 are formed alternately with the space of several millimeters between and with use of the photo resist or the metal foil mask. These layers can also formed checkered instead also with the space of several millimeters. In this way, an outstanding getter function is obtained at the boundary of the ion injection layers, and thus the crystal defect can be reduced greatly on the surface of substrate 11. Thus, the junction leak can also be reduced when the element is formed.
Inventors:
WADA KUNIHIKO
IIDA ATSUO
TOUGEI YOSHIIKU
IIDA ATSUO
TOUGEI YOSHIIKU
Application Number:
JP5980278A
Publication Date:
November 27, 1979
Filing Date:
May 19, 1978
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/73; H01L21/265; H01L21/322; H01L21/324; H01L21/331; H01L29/32; (IPC1-7): H01L21/265; H01L21/322; H01L21/324; H01L29/32