Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS55115345
Kind Code:
A
Abstract:
PURPOSE:To obtain an oxide film for isolating the elements, which has high precision with no swell on the surface of wafer and no encroachment in the lateral direction, by laminating a nitride film on the wafer. CONSTITUTION:The mask 2 of nitride film is provided on the Si wafer 1 and oxidized at high tempeature, the oxide film is etched with fluoric acid to form the groove 5. The nitride film 6 is generated by the vapor growth method to cover the entire surface. Next the nitride film 6 is removed from the bottom of the groove 5 by the plasma of Freon gas. At this time, the nitride film 7 is remained under the eaves of the nitride film 2 in the groove 5 on account of the rectilinear propagation nature of gas plasma. The oxide film 8 is generated up to the surface of wafer by wet oxidation, and the nitride film 2 is removed from the surface last. In this way, a flat surface can be obtained, no break of the wiring will take place, the dimension of isolating layer is exact, no deterioration of voltage withstanding capability will be developed, the device can be miniaturized.
Inventors:
SASAKI HIROO
Application Number:
JP2293079A
Publication Date:
September 05, 1980
Filing Date:
February 28, 1979
Export Citation:
Assignee:
CHO LSI GIJUTSU KENKYU KUMIAI
International Classes:
H01L21/302; H01L21/3065; H01L21/316; (IPC1-7): H01L21/302; H01L21/94
Domestic Patent References:
| JPS53120289A | 1978-10-20 |
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