MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS56135973

Kind Code:

A

Abstract:

PURPOSE: To improve memory holding characteristics by a method wherein a silicon oxide film and a silicon nitride film are covered on a silicon substrate, and heat- treated in a hydrogen atmosphere, and further, a polycrystalline silicon film is covered on the silicon nitride film.

CONSTITUTION: A thin oxide film 4 is formed after an oxide film 2 for separating elements therebetween is formed on the surface of the P type silicon substrate 1. Then, after the silicon nitride film 5 is piled by a vapor growth method, the heat treatment is applied in the hydrogen atmosphere and in addition, the polycrystalline silicon 6 with is to become a gate by the vapor growth method is formed. Subsequently, a source and drain diffused layer 7 is formed by an ion-implantation and also the polycrystalline silicon 6 is doped. Then, a phosphorous glass film 8 is covered and a wiring layer 10 is formed with Al.

Inventors:

TANIDA YUUJI
KONDOU RIYUUJI
MINAMI SHINICHI
ITOU YOUKICHI

Application Number:

JP3892180A

Publication Date:

October 23, 1981

Filing Date:

March 28, 1980

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/8247; H01L21/28; H01L29/788; H01L29/792; (IPC1-7): G11C11/40; H01L29/78

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