Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5629333
Kind Code:
A
Abstract:
PURPOSE:To facilitate an easy miniature fabrication of a high melting point metallic silicide film and of a gate wire which are stable against high temperature treatment and low in wiring resistance in a semiconductor device by heat treating the film prior to photoetching thereof. CONSTITUTION:A high melting point metallic silicide film is formed by sputting process or the like. After the film is then heat treated, it is photoetched to obtain a high melting point metallic silicide 3 and a photoresist 4 in pattern. The high melting point metallic silicide is in amorphous state at the time of sputtering it to isotropically proceed the etching process, but when it is heated at higher than 400 deg.C, it is gradually crystallized to cause a thin film used for gate wire to become columnar crystal having small grain size. Accordingly, heat treated high melting point metallic silicide is subjected to longitudinal etching in crystalline orientation and is difficult to be subjected to side etching for an easy miniature fabrication thereof.
Inventors:
OGATA TOSHIAKI
Application Number:
JP10564779A
Publication Date:
March 24, 1981
Filing Date:
August 20, 1979
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L21/3205; H01L21/306; H01L23/52; (IPC1-7): H01L21/88