Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58157137
Kind Code:
A
Abstract:
PURPOSE:To perform fine work by a method wherein expansion of an oxide film in terms of thickness resulting from oxidation is made use of in a self-alignment manner in a process wherein oxidation proceeds under an acid-resistant insulating film produced by selective oxidation or wherein a thin film layer is coverted into an oxide film in a high temperature O2 atmosphere. CONSTITUTION:A poly-Si film 13 and then an Si3N4 film are formed on an Si3N4 film 12, and photoetching is performed for the formation of a pattern 14' with its width measuring about 2mum. The poly-Si film 13 is oxidized as a selective oxidized mask for the formation of an SiO2 film 15. The SiO2 film is formed also as oxidation proceeds under the pattern 14', whereafter a poly-Si film pattern 13' remains with a superficial pattern width m of about 0.4-0.6mum. When the remaining poly-Si film 13'' is completely oxidized, SiO2 film patterns 16 are formed on the Si3N4 film 12 with a gap l between the patterns. The gap l is so fine as to be about 0.2-0.3mum wide, however, this is because the gap width is narrowed by the value which is the expansion thickness of the oxidized film when converted thereinto.
Inventors:
KIKUCHI KAZUYA
NISHIKAWA ATSUO
YONEDA TADANAKA
SASAKO MASARU
NISHIKAWA ATSUO
YONEDA TADANAKA
SASAKO MASARU
Application Number:
JP4129282A
Publication Date:
September 19, 1983
Filing Date:
March 15, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Toshio Nakao