Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59119730
Kind Code:
A
Abstract:
PURPOSE:To remove a stepped difference in opening sections formed to laminated insulating films, and to obtain wiring layers with no disconnection positively by forming an etching mask on the surface of a plural layer of insulating films and each forming the opening sections to an upper layer and a lower layer while etching the upper layer insulating film section again as the mask is left as it is. CONSTITUTION:A SiO2 film as the lower layer insulating film 12 and a Si3N4 film as the upper layer insulating film 13 are laminated and applied on the surface of a semiconductor substrate 11, and a mask pattern 20 with an opening corresponding to the electrode section of a semiconductor element formed to the substrate 11 is formed on the films 13. The opening section 21a is bored to the upper layer film 13 through etching by using a mixed gas of CF4 and O2, and the exposed lower layer film 12 is etched by using CH3COOH to form the opening section 21b. However, an eave-shaped projecting section 14 is removed through second etching as the pattern 20 is left as it is because the projecting section 14 remains in the film 13 under the state. Accordingly, the laminated films with no stepped difference are obtained in the opening section.
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Inventors:
AOYAMA MASAHARU
ABE MASAYASU
MASE KOUICHI
ABE MASAYASU
MASE KOUICHI
Application Number:
JP23292682A
Publication Date:
July 11, 1984
Filing Date:
December 24, 1982
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
Takehiko Suzue