Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5921043
Kind Code:
A
Abstract:
PURPOSE:To prevent the disconnection of each of an upper metallic layer and a lower metallic layer through side etching while fining a wiring by each metallic layer easily by forming the inter-layer insulating films of an upper layer metal and a lower layer metal by the insulating films of two layers of different etching rates and forming the structure of an opening section for communicating each layer metal in a two stepped shape. CONSTITUTION:An electrode and a wiring by a first metallic layer 3 are formed onto a semiconductor substrate 1 containing a comparatively thick oxide film 2, and a first insulating film 7 and a second insulating film 8 are formed for insulation from a second metallic layer 4. A first opening section 9 is formed to the second insulating film 8 on a region in which the opening section for communicating the first metallic layer 3 and the second metallic layer 4 must be formed. A second opening section 10 is formed to the first insulating film 7 in the opening section 9. A resist 12 is removed, the metallic layer 4 is formed to the metallic layer 3 in the opening section 10 and the whole surface containing the opening section 10 and the opening section 9, a connection with the metallic layer 3 or the wiring by the metallic layer 4 is formed through a photoetching method, and the device is completed.
Inventors:
FUNAKOSHI YASUHIRO
Application Number:
JP13275582A
Publication Date:
February 02, 1984
Filing Date:
July 27, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/522; H01L21/306; H01L21/768; (IPC1-7): H01L21/306
Domestic Patent References:
| JPS5455388A | 1979-05-02 | |||
| JPS5384580A | 1978-07-26 |
Attorney, Agent or Firm:
Masuo Oiwa