Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5944846
Kind Code:
A
Abstract:
PURPOSE:To prevent the disconnection of wiring layer at a phosphor silicate glass film or wire connecting part by heating and fusing said phosphor silicate glass film on a semiconductor substrate with an infrared lamp. CONSTITUTION:After forming a gate electrode 3, source region 5 and drain region 6 on the region isolated by a field oxide film 2 on a semiconductor substrate 1, an insulating film 7 consisting of phosphor silicate glass film is deposited on the entire part, and connecting windows 8, 8' to be connected to the source layer 5 and drain layer 6 are also formed. The upper periphery 71 of connecting windows 8, 8' and the stepped part of insulating film 72 of pattern edge are heated and fused by an infrared lamp and these are tapered gradually. Thereafter, a metal thin film layer is formed through the windows 8, 8' and a wiring layer 9 is also formed by the patterning. Thereby, disconnection of wiring layer can be prevented and reliability can also be improved.
Inventors:
UOOCHI YASUO
SHIMODA HARUO
MAEDA MAMORU
TAKAGI MIKIO
SHIMODA HARUO
MAEDA MAMORU
TAKAGI MIKIO
Application Number:
JP15629782A
Publication Date:
March 13, 1984
Filing Date:
September 07, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/768; H01L21/314; H01L21/316; (IPC1-7): H01L21/314
Domestic Patent References:
| JPS5249769A | 1977-04-21 | |||
| JPS5280779A | 1977-07-06 |
Attorney, Agent or Firm:
Koshiro Matsuoka
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