Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6010718
Kind Code:
A
Abstract:
PURPOSE:To level the surface of an electrode and to form a transistor comprising uniform characteristics by forming the second electrode consisting of a polycrystalline Si film on the electrode for leading out an emitter with overlapping to fill up an isolating groove. CONSTITUTION:The surface of a semiconductor substrate is covered with a polycrystalline Si film followed by pattering to form an electrode 108 for leading out an emitter. At this time, a groove 109 is formed in an opening 106. Next, the surface of the emitter leading-out electrode 108 is added impurities by ion implantation and further an emitter region 107 is formed in a base region 105 by heat treatment. Next, the semiconductor substrate surface including the emitter leading-out electrode 108 is coated with a polycrystalline Si film to fill the isolating groove 109 followed by patterning to form a leading-out electrode 110 on the emitter leading-out electrode 108 in a manner it does not overlap the electrode 108.
Inventors:
AZUMA HIROYASU
Application Number:
JP11914083A
Publication Date:
January 19, 1985
Filing Date:
June 30, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Domestic Patent References:
| JPS5874037A | 1983-05-04 |
Attorney, Agent or Firm:
Uchihara Shin