Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6037148
Kind Code:
A
Abstract:
PURPOSE:To prevent the corrosion of a second layer wiring from the intrusion of moisture through a through-hole in a second layer insulating film by forming a second mask guide for aligning the through-hole and the second layer wiring on a first layer insulating film at a position separate from a first mask guide at the same time as the second layer wiring while using the first mask guide as a reference. CONSTITUTION:GB1 and GB2 in second mask guides are formed so as to be each aligned on first mask guides GA1, GA3. CVD.SiO2 or PSG is deposited on the whole surface to form a second layer insulating film (an insulating film for protection) 6, and a through-hole 9 for a bonding pad 14 is bored to one part of the second layer insulating film 6 through photoetching. A second mask guide GB3 is used in order to mutually align the through-hole 9 and a second layer wiring 5. A small through-hole 15 is bored to the second layer insulating film 6 on the second mask guide GB3 by a guide pattern on the mask side on the mask alignment. On the other hand, through-holes are not bored on other second mask guides GB1, GB2. GB3 is formed at a position sufficiently separate from the second layer wiring.
Inventors:
TAKAHASHI HIDEKAZU
Application Number:
JP14497983A
Publication Date:
February 26, 1985
Filing Date:
August 10, 1983
Export Citation:
Assignee:
HITACHI MICROCUMPUTER ENG
HITACHI LTD
HITACHI LTD
International Classes:
H01L21/3213; H01L21/31; H01L21/314; (IPC1-7): H01L21/314
Attorney, Agent or Firm:
Akio Takahashi