Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6086841
Kind Code:
A
Abstract:
PURPOSE:To save the waste of a material for an electrode bump, and to reduce cost by forming the electrode bump on a transparent substrate for forming a rectangular shape electrode and selectively transferring and forming the electrode bump to a semiconductor element chip on a semiconductor substrate. CONSTITUTION:An insulating film 13 is shaped on a semiconductor substrate 9, and electrode pads 11 and a surface protective film 15 are formed on the insulating film 13. A transparent conductive electrode 18 and an insulating film 19 are formed on a transparent substrate 16 for shaping electrodes, and electrode bumps 21 are formed to opening sections 20 in the insulating film 19. Au is used as the bumps 21. The bumps 21 and the pads 11 are positioned. The bumps 21 and the pads 11 are combined through pressing and the projection of heat-wave beams 22. The rectangular transparent conductive electrode 18 is placed and positioned onto the substrate 9. The substrate 9 is moved, beams 22 are projected when acceptable semiconductor chips 8 are conformed, and beams 22 are not projected when defective semiconductor chips 8' are conformed and the substrate 9 is shifted to the next position. Accordingly, the waste of a bump material can be conserved because the bumps are formed only to acceptables.
Inventors:
KONDOU SHIYUUJI
KITAHIRO ISAMU
TAKAHASHI HIROSHI
HIRAI MINORU
KITAHIRO ISAMU
TAKAHASHI HIROSHI
HIRAI MINORU
Application Number:
JP19564583A
Publication Date:
May 16, 1985
Filing Date:
October 19, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/60; (IPC1-7): H01L21/60
Attorney, Agent or Firm:
Toshio Nakao