MANUFACTURE OF SEMICONDUCTOR DEVICE - OKI ELECTRIC IND CO LTD

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6220338

Kind Code:

A

Abstract:

PURPOSE: To form a back side metal by initially depositing Ti having strong bonding force to GaAs in the formation of the back side metal of a GaAs semiconductor substrate formed with an element, and continuously depositing Au for preventing the Ti from oxidizing to prevent the element from deteriorating due to a heat treatment.

CONSTITUTION: The back surface of a GaAs semi-insulating semiconductor substrate 1 is treated, and formed in the prescribed thickness. Then, a Ti layer 2 is laminated in the thickness of approx. 500 by an electron beam depositing method, an Au layer 3 is continuously laminated in the thickness of approx. 2,500 by an electron beam depositing method, and an Sn layer 4 is laminated in the thickness of approx. 2W3μm by a resistance heating depositing method. Thereafter, it is divided into individual semiconductor pieces, and bonded to a base. Since the layer 2 having strong bonding force to the substrate 1 can be laminated at temperature of approx. room temperature, it can prevent the characteristics of the element formed on the substrate 1 from deteriorating.

Inventors:

TAKAHASHI SEIICHI
NONAKA TOSHIO
UENISHI KATSUZO

Application Number:

JP15827785A

Publication Date:

January 28, 1987

Filing Date:

July 19, 1985

Export Citation:

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