PURPOSE: To decrease the number of photomasks required for manufacture by executing a photoetching process aiming at the formation of different patterns as a contact hole and an opening section in the upper section of a PAD by using the same photomask.

CONSTITUTION: A MOS transistor is formed, and an inter-layer insulating film 108 is shaped onto the whole surface of a wafer substrate. The whole surface of the wafer substrate is spin-coated with a photoresists 109, and the photoresists in a contact hole and a section, to which a PAD shaped, are removed through exposure and development by employing a photomask. The inter-layer insulation film is etched, the photoresist 109 is gotten rid of, and the contact hole 110 is formed. A source electrode 111, a drain electrode 112 and a PAD 113 are shaped, a passivation film 114 and a photoresist 115 are formed to the whole surface of the wafer substrate, and exposure and development are conducted by using the photomask employed at the time of the formation of the contact hole 110. Accordingly, the number of the photomasks is decreased.