MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS6412576

Kind Code:

A

Abstract:

PURPOSE: To manufacture a semiconductor device of stable characteristics with a high reproducibility by a method wherein the channel part is protected an insulating layer before a high impurity concentration semiconductor layer is built up to form the source and drain regions.

CONSTITUTION: After a p-type Si layer 101 is formed on a glass substrate 100, a silicon nitride layer 102 is formed and then a photoresist pattern 103 is formed and the layer 102 is etched with the pattern 103 as a mask Then an n+type Si layer 104 is built up on the pattern 103 and the resist pattern 103 is removed. At the same time, the layer 104 on the resist pattern 103 is removed. Then a silicon nitride layer 105 is formed and the layer 105 is patterned to form apertures for leading out electrodes. Then electrodes 106 are formed. With this constitution, as the channel part is protected by the insulating layer, it is not contaminated. Therefore, a semiconductor device of stable characteristics can be produced with a high reproducibility.

Inventors:

KAWAKAMI SOICHIRO

Application Number:

JP16950287A

Publication Date:

January 17, 1989

Filing Date:

July 07, 1987

Export Citation:

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Assignee:

CANON KK

International Classes:

H01L21/302; H01L21/28; H01L21/3065; H01L21/3205; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/28; H01L21/302; H01L21/88; H01L27/12; H01L29/78

Attorney, Agent or Firm:

Fukumori Hisao

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