Title:
超低静電容量配線のためのエアギャップを備える半導体装置の製造
Document Type and Number:
Japanese Patent JP4535303
Kind Code:
B2
Abstract:
A method of forming an air gap (26) or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material (20) to occupy a closed interior volume in a semiconductor structure. The sacrificial material (20) is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer (24). The decomposition of the sacrificial material leaves an air gap or gaps (26) at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.
Inventors:
Cole, Paul A
Zao, Kian
Allen, Sue Ann Biztrap
Zao, Kian
Allen, Sue Ann Biztrap
Application Number:
JP53464998A
Publication Date:
September 01, 2010
Filing Date:
January 21, 1998
Export Citation:
Assignee:
The B. F. Goodrich Company
International Classes:
C08F32/00; H01L21/768; C08F32/08; H01L21/312; H01L21/56; H01L21/764; H01L23/29; H01L23/31; H01L23/522
Domestic Patent References:
| JP8083839A | ||||
| JP7045701A | ||||
| JP4063807A |
Other References:
Reduced Capacitance Interconnect System using Decomposition of Air Gap Filler Material, IBM Technical Disclosure Bulletin, 米国, 1995年 9月, Vol.38, No.39, pp.137-140
Attorney, Agent or Firm:
Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita