Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2000323722
Kind Code:
A
Abstract:
To provide a method for manufacturing a semiconductor element with high reliability.
While a material containing at least one metal element from among nickel, iron, cobalt, and platinum is brought into contact with the top surface of an amorphous silicon film 12, a heat treatment is carried out for crystallization and then the crystallized silicon film has an impurity region, doped with phosphorus, selectively formed and thermally treated. The heat- treated impurity region has a concentration of ≥1×1017 cm-3 of the metal element and a channel formation area has a concentration of <1×1020 cm-3 of the metal element.
Inventors:
CHO KOYU
UOJI HIDEKI
TAKAYAMA TORU
TAKEMURA YASUHIKO
UOJI HIDEKI
TAKAYAMA TORU
TAKEMURA YASUHIKO
Application Number:
JP2000125250A
Publication Date:
November 24, 2000
Filing Date:
March 12, 1993
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/20; H01L21/336