PURPOSE: To enable forming a junction region of a low resistance electrode and a semiconductor without the diffusion of impurities by burying a multilayered crystal structure by growing a plurality of buried layers on the mesa type side of the multilayered crystal structure.
CONSTITUTION: After a growth layer is formed with a multilayered structure consisting of at least the first clad layer 2, an active layer 3, the second clad layer 4, a cap layer 5 and a growth blocking layer 6 at the time of the first growth, when the multilayered structure is etched to from a mesa, the width of a mesa is made narrower by selectively etching the cap layer 5 excessively than the adjacent second clad layer 4 and the growth blocking layer 6. At the time of burying and growing, the interface of the last layer 13 of a plurality of buried layers and a layer 12 immediately before the last layer 13 is made nearly coincide with the interface of the second clad layer 4 and the cap layer 5 of a mesa region and simultaneously, the buried last layer 13 and the cap layer 5 of the mesa region are formed to be made a continuous one layer. This enables forming a low resistance electrode in a buried type semiconductor laser without the diffusion process of a impurities and obtaining a laser oscillation at a low voltage.
TAKAHASHI KOUSEI
KONDO MASAFUMI
HAYAKAWA TOSHIRO
| JPS60105513A | 1985-06-11 | |||
| JPS60262622A | 1985-12-26 | |||
| JPS4968562A | 1974-07-03 | |||
| JPS597829U | 1984-01-19 |
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