To provide a manufacturing method for a semiconductor laser which has a good high-temperature operating characteristic and whose laser characteristic is stable with the passage of time, by a method wherein the deactivation due to hydrogen of p-type impurities is prevented and a p-carrier concentration is made high.

When an AlGaInP-based visible semiconductor laser is manufactured, an atmosphere gas is changed over to a gas not containing nitrogen gas or the like from hydrogen gas + a hydrogenation group V gas in a temperature lowering process after a crystal growth operation. Therefore, it is possible to prevent hydrogen from being taken into a p-type semiconductor crystal, or it is possible to prevent that hydrogen which is already taken into is desorbed from a semiconductor. As a result, a high p-carrier concentration is obtained, a good high-temperature operating characteristic is realized, and a laser characteristic which is stable with the passage of time can be realized.