PURPOSE: To improve the element characteristic of a semiconductor laser by setting the raw material supplying ratio between the group III elements for constituting a clad layer in such a way depending upon the growing temperature that the In supplying ratio is made smaller or the Ga and Al supplying ratios are made larger against the raw material supplying ratio between the group III elements for constituting an n-type clad layer.
CONSTITUTION: At the time of forming a p-type clad layer 15 having a double- heterostructure, the increased amount of the lattice constant due to Zn doping and growing temperature is compensated by changing the supplying ratio of group III raw materials (for making In/Ga+Al ratio smaller or Ga+Al/In ratio larger). Accordingly, the p-type clad layer 15 in which lattice mismatching is produced under the same condition as that of the gaseous component under which lattice matching takes place in a n-type clad layer 13 can be grown under a condition where lattice matching occurs in a GaAs substrate 11 and excellent hetero-growth can be realized. Therefore, the occurrence of crystal faults, impression of stress upon an active layer, etc., caused by lattice mismatching can be suppressed and the characteristic of the manufactured laser semiconductor laser can be improved.
SUGAWARA HIDETO
ISHIKAWA MASAYUKI
