PURPOSE: To obtain a buried type AlGaInP visible-light semiconductor laser readily, by transferring a wafer to the formation of a double heterostructure, which is to become the base of a laser, continuously, without taking the wafer out of a reacting tube, and controlling a lateral mode excellently.

CONSTITUTION: On a GaAs substrate 1, an (AlxGa1-x)0.5In0.5P layer 2 (0<x≤1) and a Ga0.5In0.5P layer 3 are sequentially provided. On the layer 3, an insulating layer 4 such as SiO2 is formed. Only the insulator layer 4 is selectively removed in a strip shape. Under the pressure of phosphorus and the presence of gas such as HCl, a semiconductor layer, which is exposed in a strip shape, undergoes vapor phase selective etching in a reacting tube to the surface of the substrate at a high temperature. A plurality of layers of a clad layer 7, an active layer 8 and a clad layer 9 having different compositions are formed in a removed part 6 of GaInP-AlGaInP by using a vapor growth method of thermal organic metal decomposition in the same reacting tube without exposing the substrate 1 in atmosphere. Thus a lateral mode is excellently controlled, and the embedded type AlGaInP visible-light semiconductor laser is readily obtained.