To increase the contact area of a contact and a diffusion layer and also reduce contact resistance by making a contact for a bit line and a contact for a plurality of capacitive elements as a pattern when the contacts are formed in a self-alignment manner.

A nitride film 6 functioning as a stopper film when a contact etching is performed is formed on a gate top electrode 5. Then, an interlayer insulation film 9 is formed. Then, a contact pattern 10 is made by using a contact photolithography technology. A contact is made by using a contact pattern 10 in which a bit contact is integrated with a capacitive contact. This stops a contact etching by the nitride film 6 formed on the electrodes 4, 5 to prevent the top surfaces of the electrodes 4, 5 from being exposed to make a bit contact and two capacitive contacts, whereby the contact can be formed in a larger size than ever.