PURPOSE: To make an electrostatic capacity per unit area large without worsening the flatness of a semiconductor element by a method wherein a storage-electrode material is recrystallized so as to have a uniform structure in the thickness direction.

CONSTITUTION: An SiO2 film 2 an Si3N4 film 3 and an SiO2 film 4 are laminated sequentially on an Si substrata 1; a contact hole 8 is opened through the films 2 to 4. Then, a poly-Si layer 5 is formed on the SiO2 film 4 so as to cover the contact hole 8; after that, phosphorus ions are implanted into the poly-Si layer 5; the poly-Si layer 5 is made amorphous; and an amorphous Si layer 5' is formed. Its energy corresponds to a range of 50nm. The amorphous Si layer 5' is recrystallized by an annealing operation; phosphorus is activated. A recrystallized Si layer is formed; it is patterned by an anisotropic etching operation; and a storage electrode 5" is formed. Thereby, an electrostatic capacity per unit area can be made large without worsening the flatness of a semiconductor element.